Sapphire Wafer

Overview

Chemical component

Al₂O₃

Growing methods

kyropoulos

Crystalline structure

hexagon

a = b = 4.77 A

c = 13.04 A

Thermal energy

Melting point

2050 °C

Coefficient of linear expansion

6.7 x 10-6 / °C parallel to the С axis

5.0 x 10-6 / °C perpendicular to the С axis

Heat conductivity coefficient

46.06 W/(mK) (0°C)

Mechanical Energy

Density

3.98 g/cm3

Hardness

mohs: 9

knoop: 1900 parallel to the С axis

2200 perpendicular to the С axis

Tensile strength

400 mpa (25°C), 275 mpa (500°C), 345 mpa (1000°C)

Bending strength

450 - 895 mpa

Compression stress

2.0 gpa

Young's modulus

345 gpa

Electric Supply

Electric-mediated magnetic permeability

9.3 (103 - 109 Hz, 25°C) perpendicular to the С axis

11.5 (103 - 109 Hz, 25°C) parallel to the С axis

Resistivity

1016 Оhm·сm (25°C)

1011 Оhm·сm (500°C)

106 Оhm·сm (1000°C)

High temperature resistance

It melts only at 2050°C. chemically inert at high temperatures

Sturdy and durable

scratch-resistant (all materials except diamond)

high pressure resistant

wear resistance

Tolerate most harsh environments

long service life, e.g. five times the length of quartz

high chemical purity

The range of light transmittance from ultraviolet to infrared

80~90% in 0.25 ~~ 4.50 um

High thermal conductivity

provide rapid heating and cooling