Quartz Wafer Substrate
Quartz Wafer Substrates are wafers primarily made of high-purity quartz (SiO₂), widely used in semiconductors, optoelectronics, micro-electromechanical systems (MEMS), optical devices, and other fields.
Description
Material Properties
- High Purity: Typically made from synthetic quartz (e.g., fused silica), with extremely high purity (≥99.99%) and minimal impurities to avoid affecting device performance.
- Thermal Stability: Low coefficient of thermal expansion (≈0.55×10⁻⁶/°C) and high-temperature resistance (softening point ~1600°C), suitable for high-temperature processes.
- Optical Performance: Broad transmission range (UV to IR), with exceptional UV transmittance, ideal for photomasks, lenses, etc.
- Chemical Inertness: Resistant to acids and alkalis (except hydrofluoric acid), suitable for wet etching processes.
- Electrical Insulation: High resistivity (>10¹⁶ Ω·cm), ideal for insulating substrates or high-frequency devices.
Applications
Semiconductor Manufacturing
- Photomask substrates
- EUV lithography components
- Wafer processing carriers
Photonics & Optoelectronics
- Optical waveguide substrates
- Laser diode mounting
- Quantum computing components
Specialty Applications
- MEMS resonator bases
- Space telescope optics
- High-energy laser systems
Manufacturing Process
- Raw Material Synthesis: Produced via vapor deposition (e.g., SiCl₄ oxidation) or purification of natural quartz.
- Melting and Forming: High-temperature melting followed by cooling into ingots or direct drawing into rods.
- Cutting: Sliced into thin wafers using diamond wire saws or laser cutting.
- Grinding and Polishing: Chemical mechanical polishing (CMP) achieves nanometer-level smoothness.
- Cleaning and Inspection: Removal of particles and metal contaminants, followed by defect and parameter testing.
Properties
|
Physical Properties |
Values |
|
Purity |
＞99.99% |
|
Density |
2.2g/cm3 |
|
Transparency |
＞90% |
|
Mohs Hardness |
5.5--6.5 |
|
Deformation Point |
1280℃ |
|
Softening Point |
1750℃ |
|
Annealing Point |
1250℃ |
|
Specific Heat (20 - 350°C) |
670J/kg.℃ |
|
Thermal Conductivity (20°C) |
1.4W/m.℃ |
|
Heat Conductivity (w/m.k,1000 ℃ ) |
1.0-1.2 |
|
Refractive Index |
1.4585 |
|
Coefficient of Thermal Expansion |
5.510 -7cm/cm.℃ |
|
Hot - working Temperature |
1750--2050℃ |
|
Short - term Service Temperature |
1450℃ |
|
Long - term Service Temperature |
1100℃ |
|
Chemical Properties |
Values |
|
Acid resistant |
Strong Acid(except HF),Strong alkali, organic solution |
|
High temperatures Corrosion resistant |
Excellent |
|
Metal Impurity Content |
＜5 ppm |
|
Electrical Properties |
Values |
|
Resistivity |
7107Ω.cm |
|
Insulation Strength |
250~400Kv/cm |
|
Dielectric Constant |
3.7~3.9 |
|
Dielectric Absorption Coefficient |
＜410-4 |
|
Dielectric Loss Coefficient |
＜110-4 |
|
Mechanical Properties |
Values |
|
Compressive Strength |
1100MPa |
|
Bending Strength |
67MPa |
|
Tensile Strength |
48MPa |
|
Poisson's Ratio |
0.14~0.17 |
|
Young's Modulus |
72000MPa |
|
Shear Modulus |
31000MPa |
FAQ
Q1: What's the maximum quartz wafer substrates size available?
A: Standard production up to 300mm diameter, with 450mm prototypes available for R&D.
Q2: Can you provide customized thickness profiles?
A: Yes - we can produce:
- Wedged wafers (for laser applications)
- Precision tapered designs
- Mesa-structured surfaces
Q3: What cleaning protocol do you recommend?
A: Standard RCA clean process:
1. Organic removal (H₂SO₄:H₂O₂)
2. Ionic cleaning (HCl:H₂O₂)
3. HF-last for hydrophilic surface
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